PEROVSKITE SOLAR CELL EFFICIENCY STUDY WITH SIMULATION USING IONMONGER

• Main Author: Muhammad Lazuardi, Adnan
• Format: Final Project
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/71883
• Institution: Institut Teknologi Bandung

Perovskite-based solar cells (PSCs) are receiving a lot of attention because of their significant developments. Perovskite material has low exciton binding energy, high optical absorption coefficient, high electron mobility, and very good photovoltaic performance. However, perovskite material has a soft lattice structure that makes it easy to form defects and allows ions to quickly move through these defects. The physical processes that occur in perovskite solar cells such as ion migration and recombination have been found to be related to perovskite solar cell (PSC) efficiency. In this study, the effect of recombination due to the presence of the interfacial trap state and the emergence of hysteresis due to ion migration on the efficiency of perovskite solar cells (PSC) will be studied. The charge carrier transport process in perovskite solar cell (PSC) devices has been modelled in the drift-diffusion model. IonMonger, a computational program based on the finite element method, is used to solve the drift-diffusion model. The solution of the model produces the J-V curve, electric potential curve, electron distribution, and anion vacancy density distribution. Parameters of perovskite solar cell (PSC) devices such as perovskite layer thickness, recombination rate, amount of doping in the transport layer, ion diffusion coefficient, and ion vacancy density were varied to study how ion migration and recombination can affect cell efficiency. The simulation results show that recombination due to the existence of the interfacial trap state affects the decrease in Jsc and Voc and the number of interfacial trap states in the ETL interface has a more dominant effect than the trap state in the HTL interface. In addition, the simulations show that the formation of band-bending causes the hysteresis at the interface to be affected by the accumulation of anion vacancies at the interface.