DESIGN AND DEVELOPMENT OF RADIO FREQUENCY POWER AMPLIFIER USING GAN HEMT FOR WIRELESS COMMUNICATION

• Main Author: Rahayu, Sarah
• Format: Theses
• Language: Indonesia
• Online Access: https://digilib.itb.ac.id/gdl/view/80314
• Institution: Institut Teknologi Bandung

RF (Radio Frequency) power amplifier is one of the components needed in the signal transmission process to ensure that no distortion occurs due to attenuation that occurs during the signal transmission process. In designing an RF power amplifier, transistors are one of the components that affect the performance of an RF power amplifier. The GaN HEMT (Gallium Nitride High Electron Mobility Transistor) transistor type is widely used to design RF power amplifiers because it can work at high frequencies with high electron mobility thus this type of transistor can provide high power efficiency. Due to the development of increasingly complex communications, it requires devices that can support the system, one of which is the need for an RF power amplifier to avoid failure when amplifying signal power. Parallel power amplifier is one of the configuration options that can be used to avoid signal amplification failures at the transmitter. The two power amplifiers are arranged in parallel and work independently without affecting each other. In this research, the design, simulation, and realization of a parallel RF power amplifier that works for wireless communication applications are carried out. A power divider using the Cohn topology is used to divide the input power into two equal parts with the same phase. The dielectric material used is Rogers R0-4003C with relative permittivity (?r ) 3,55 and a thickness of 0.81 mm. The maximum gain measurement produced at 1.25 GHz is 16.43 dB with a bandwidth of -3 dB reaching 2.5 GHz in the range of 1 - 3.5 GHz.