#TITLE_ALTERNATIVE#
The effect of annealing on electrical properties to study thermal stability, interface effect, and oxidation reaction of AlGaN grown on Si (111) by plasma-assisted metal-organicvapour-deposition (PA-MOCVD) method as metal-semiconductors-metal (MSM) Schottky contact was investigated. The dependence o...
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| Format: | Final Project |
| Language: | Indonesia |
| Online Access: | https://digilib.itb.ac.id/gdl/view/8367 |
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| Institution: | Institut Teknologi Bandung |
| Language: | Indonesia |