Dopant concentrations analysis on electro-optic performances of gallium nitride-based ultraviolet light-emitting diode chip

• Main Authors: Nazmi, Ahmad Nadzimuddin, Hairol Aman, Mohammad Amirul, Ahmad Fajri, Faris Azim, Ahmad Noorden, Ahmad Fakhrurrazi, Isa, Hafizah Noor, Suzairi, Daud
• Format: Article
• Language: English; English
• Published: Society of Photo-Optical Instrumentation Engineers (SPIE) 2023
• Subjects: QC Physics
• Online Access: http://irep.iium.edu.my/105823/7/105823_Dopant%20concentrations%20analysis%20on%20electro-optic%20performances.pdf; http://irep.iium.edu.my/105823/8/105823_Dopant%20concentrations%20analysis%20on%20electro-optic%20performances_Scopus.pdf; http://irep.iium.edu.my/105823/; https://www.spiedigitallibrary.org/journals/optical-engineering/volume-62/issue-7/077104/Dopant-concentrations-analysis-on-electro-optic-performances-of-gallium-nitride/10.1117/1.OE.62.7.077104.short?SSO=1
• Institution: Universiti Islam Antarabangsa Malaysia

A high dopant concentration significantly reduces the peak current of the internal quantum efficiency (IQE) of the light-emitting diode (LED). The effect of the dopant concentration on the epitaxial layer toward the IQE, current density, and IQE droop of gallium nitride (GaN)-based LED chip is analy...