Transition of electron transport process in Be-doped low-temperature-grown GaAs layer
Effects of the structure change of antisite-As (AsGa) defects on the electron transport property in Be-doped low-temperature-grown GaAs layers were investigated. In this material AsGa atoms cooperatively change their positions between substitutional and interstitial sites. We found an abrupt change...
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| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
American Institute of Physics
2013
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| Subjects: | |
| Online Access: | http://irep.iium.edu.my/31780/2/JAP2013-.pdf http://irep.iium.edu.my/31780/ |
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| Institution: | Universiti Islam Antarabangsa Malaysia |
| Language: | English |