Transition of electron transport process in Be-doped low-temperature-grown GaAs layer

• Main Authors: Mohamed, Mohd Ambri, Otsuka, Nobuo, Pham, Tien Lam
• Format: Article
• Language: English
• Published: American Institute of Physics 2013
• Subjects: QC Physics; TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://irep.iium.edu.my/31780/2/JAP2013-.pdf; http://irep.iium.edu.my/31780/
• Institution: Universiti Islam Antarabangsa Malaysia

Effects of the structure change of antisite-As (AsGa) defects on the electron transport property in Be-doped low-temperature-grown GaAs layers were investigated. In this material AsGa atoms cooperatively change their positions between substitutional and interstitial sites. We found an abrupt change...