Effect of single event upset on 6T and 12T 32NM CMOS SRAMs circuit

• Main Authors: Yusop, Nur Syafiqah, Mahmud, Manzar, Nordin, Anis Nurashikin, Hasbullah, Nurul Fadzlin
• Format: Conference or Workshop Item
• Language: English
• Published: Penerbit UMT, Universiti Malaysia Terengganu (UMT) 2016
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://irep.iium.edu.my/51579/1/51579_Effect%20of%20single%20event.pdf; http://irep.iium.edu.my/51579/; http://umtas2016.umt.edu.my/?page_id=210
• Institution: Universiti Islam Antarabangsa Malaysia

Static random access memory cells (SRAM) are high-speed semiconductor memory that uses flip-flop to store each bit. Over the years, technology scaling of complementary metaloxide semiconductor (CMOS) devices has also resulted in the scaling of SRAM using minimum-size transistors. As transistor si...