Doping effect numerical comparison of band gap energy and active region range for GaN and GaAs based semiconductor

• Main Authors: Faris Azim Ahmad Fajri, Faris Azim, Ahmad Fakhrurrazi, Ahmad Noorden, Azni, Abdul Aziz
• Format: Conference or Workshop Item
• Language: English; English
• Published: Institute of Physics Publishing 2021
• Subjects: QC Physics
• Online Access: http://irep.iium.edu.my/73957/8/73957_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy%20and%20active_SCOPUS.pdf; http://irep.iium.edu.my/73957/9/73957_Doping%20effect%20numerical%20comparison%20of%20band%20gap%20energy%20and%20active.pdf; http://irep.iium.edu.my/73957/; https://iopscience.iop.org/article/10.1088/1742-6596/1892/1/012031/pdf
• Institution: Universiti Islam Antarabangsa Malaysia

This work reports the effect of doping concentration on the energy-band structure of semiconductor materials. The research focuses on the resultant values of bandgap energy and its depletion region (length/area), based on the initial concentrations of doping which are the donors and acceptors. The e...