Investigation of latch-up behaviour in 0.5 micron CMOS technology / Wan Fazldia Hanim, Suhana Sulaiman and Jamil Napiah

• Main Authors: Hanim, Wan Fazldia, Sulaiman, Suhana, Napiah, Jamil
• Format: Research Reports
• Language: English
• Published: 2005
• Subjects: Electricity; Electricity and magnetism; Electric current (General)
• Online Access: https://ir.uitm.edu.my/id/eprint/48264/1/48264.pdf; https://ir.uitm.edu.my/id/eprint/48264/
• Institution: Universiti Teknologi Mara

The research project investigates available latch-up test structures from MIMOS Berhad and covers current-voltage characterization of silicon-controlled rectifier behaviour of parasitic BJTs in CMOS technology. Measurement setup utilizing the structures for IV measurements are designed. A suitable measurement routine for the testing of latch-up in MOS device engineering at wafer level is developed for use in research environment. Tests are done on available MIMOS test structures representing twin tub technology and silicon-on-insulator substrate using automatic semiconductor characterization system comprising of Semiconductor Parametric Characterization Software (SPECS), UFK200 automatic prober and Agilent 4073 tester. Avalanche induced latch-up of three types of device were demonstrated: SOI without thickness adjustment, SOI with thinner layer due to thickness adjustment and bulk silicon control device are demonstrated. Immunity towards latch-up is improved for devices on BSOI substrate.