HCI degradation effect on VDMOS transistor with geometric and process variations

• Main Authors: Yusof, H.H.M., Soin, N., Murti, W.B.
• Format: Article
• Published: Research India Publications 2015
• Subjects: TA Engineering (General). Civil engineering (General); TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://eprints.um.edu.my/19329/; https://www.ripublication.com/Volume/ijaerv10n19.htm
• Institution: Universiti Malaya

In high power systems, the application of transistor has significantly increased and this includes the important of VDMOS type of transistor. However, reliability issues have always been addressed in high voltage and current operated applications. In order to counter this issues, various studies and...