Formation and characterization of holmium oxide on germanium-based metal-oxide-semiconductor capacitor
The influence of different thermal oxidation/nitridation durations (5, 10, 15, and 20 minutes) at 400 degrees C for transforming metallic Ho sputtered on Ge substrate in N2O gas ambient have been systemically investigated to develop Ho2O3/Ge based on metal-oxide-semiconductor (MOS) device. The struc...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
John Wiley & Sons
2021
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/26476/ |
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| Institution: | Universiti Malaya |