Formation and characterization of holmium oxide on germanium-based metal-oxide-semiconductor capacitor

• Main Authors: Onik, Tahsin Ahmed Mozaffor, Hawari, Huzein Fahmi, Sabri, Mohd Faizul Mohd, Wong, Yew Hoong
• Format: Article
• Published: John Wiley & Sons 2021
• Subjects: TJ Mechanical engineering and machinery
• Online Access: http://eprints.um.edu.my/26476/
• Institution: Universiti Malaya

The influence of different thermal oxidation/nitridation durations (5, 10, 15, and 20 minutes) at 400 degrees C for transforming metallic Ho sputtered on Ge substrate in N2O gas ambient have been systemically investigated to develop Ho2O3/Ge based on metal-oxide-semiconductor (MOS) device. The struc...