Characterization of microwave photoswitch integrating Metal-Semiconductor-Metal photodetector
An experimental study implemented to present the results of the characterization of microwave photoswitches to recognize the behavior of the microwave signals under laser light of 0.85 mu m wavelength. These photoswitches consist of a coplanar line integrating a Schottky contact Metal-Semiconductor-...
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| Main Authors: | , , , |
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| Format: | Article |
| Published: |
Elsevier
2020
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| Subjects: | |
| Online Access: | http://eprints.um.edu.my/37388/ |
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| Summary: | An experimental study implemented to present the results of the characterization of microwave photoswitches to recognize the behavior of the microwave signals under laser light of 0.85 mu m wavelength. These photoswitches consist of a coplanar line integrating a Schottky contact Metal-Semiconductor-Metal (MSM) photodetectors in the central line growth on GaAs Not Intentionally Doped (N.I.D). Those MSM photodetectors have a single electrode of different finger spacings (D) ranging from 0.2 mu m to 1 mu m and different finger widths (L) ranging from 0.2 mu m to 5 mu m. The characterizations of our optoelectronic devices made in the absence of illumination allowed us good isolation equal to -40 dB and under illumination insertion losses equal to -12.7 dB at 20 GHz. The obtained results are quite satisfying, have permitted to deduce the On/Off ratios and allowed to see the influence of the geometrical parameters on the transmission and reflection coefficients. |
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