Characterization of microwave photoswitch integrating Metal-Semiconductor-Metal photodetector

• Main Authors: Zebentout, Abdel-Djawad, Benzina, Amina, Bensaad, Zouaoui, Abid, Hamza
• Format: Article
• Published: Elsevier 2020
• Subjects: QC Physics
• Online Access: http://eprints.um.edu.my/37388/
• Institution: Universiti Malaya

An experimental study implemented to present the results of the characterization of microwave photoswitches to recognize the behavior of the microwave signals under laser light of 0.85 mu m wavelength. These photoswitches consist of a coplanar line integrating a Schottky contact Metal-Semiconductor-Metal (MSM) photodetectors in the central line growth on GaAs Not Intentionally Doped (N.I.D). Those MSM photodetectors have a single electrode of different finger spacings (D) ranging from 0.2 mu m to 1 mu m and different finger widths (L) ranging from 0.2 mu m to 5 mu m. The characterizations of our optoelectronic devices made in the absence of illumination allowed us good isolation equal to -40 dB and under illumination insertion losses equal to -12.7 dB at 20 GHz. The obtained results are quite satisfying, have permitted to deduce the On/Off ratios and allowed to see the influence of the geometrical parameters on the transmission and reflection coefficients.