Effect of N2 flow rate on the properties of CNx thin films prepared by radio frequency plasma enhanced chemical vapor deposition from ethane and nitrogen

Effect of N2 flow rate on the properties of CNx thin films prepared by radio frequency plasma enhanced chemical vapor deposition from ethane and nitrogen

Carbon nitride (CNx) thin films were deposited using radio frequency plasma enhanced chemical vapor deposition (rf PECVD) from a mixture of nitrogen (N2) gas and either methane (CH4) or ethane (C2H6) gases. The CH4 and C2H 6 flow rates were kept constant, while the N2 flow rate was varied. The effec...

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Bibliographic Details
Main Authors: Othman, M., Ritikos, R., Khanis, N.H., Rashid, N.M.A., Gani, S.M.A., Rahman, S.A.
Format: Article
Published: 2013
Subjects:
QC Physics
Online Access:http://eprints.um.edu.my/7335/
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Institution: Universiti Malaya

Internet

http://eprints.um.edu.my/7335/

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