Effect of N2 flow rate on the properties of CNx thin films prepared by radio frequency plasma enhanced chemical vapor deposition from ethane and nitrogen

• Main Authors: Othman, M., Ritikos, R., Khanis, N.H., Rashid, N.M.A., Gani, S.M.A., Rahman, S.A.
• Format: Article
• Published: 2013
• Subjects: QC Physics
• Online Access: http://eprints.um.edu.my/7335/
• Institution: Universiti Malaya

Carbon nitride (CNx) thin films were deposited using radio frequency plasma enhanced chemical vapor deposition (rf PECVD) from a mixture of nitrogen (N2) gas and either methane (CH4) or ethane (C2H6) gases. The CH4 and C2H 6 flow rates were kept constant, while the N2 flow rate was varied. The effec...