Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET
This research paper presents the effect of working temperature on the ION, IOFF and ION/IOFF ratio of gate all around nanowire TFET. The (Silvaco) simulation tool has been used to investigate the temperature characteristics of a transistor. The working temperature range of this study is from -5...
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| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
IEEE Xplore
2020
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| Subjects: | |
| Online Access: | http://umpir.ump.edu.my/id/eprint/30155/1/09166887.pdf http://umpir.ump.edu.my/id/eprint/30155/ https://ieeexplore.ieee.org/document/9166887 |
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| Institution: | Universiti Malaysia Pahang Al-Sultan Abdullah |
| Language: | English |
| Summary: | This research paper presents the effect of
working temperature on the ION, IOFF and ION/IOFF ratio of gate
all around nanowire TFET. The (Silvaco) simulation tool has
been used to investigate the temperature characteristics of a
transistor. The working temperature range of this study is
from -50 to 150 step-up 25 oC. The final results indicate that
the negative effects of increasing working temperature of gate
all around nanowire TFET due to decreasing of the ION/IOFF
ratio. Hence, the results for ION/IOFF ratio vs. working
temperature characteristics may lead to the use of TFET in
electronic circuits with lowest possible working temperature to
obtain higher ION/IOFF ratio. |
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