Temperature Impact on The ION/IOFF Ratio of Gate All Around Nanowire TFET

• Main Authors: Agha, Firas Natheer Abdul-kadir, Hashim, Yasir, Shakib, Mohammed Nazmus
• Format: Conference or Workshop Item
• Language: English
• Published: IEEE Xplore 2020
• Subjects: TK Electrical engineering. Electronics Nuclear engineering
• Online Access: http://umpir.ump.edu.my/id/eprint/30155/1/09166887.pdf; http://umpir.ump.edu.my/id/eprint/30155/; https://ieeexplore.ieee.org/document/9166887
• Institution: Universiti Malaysia Pahang Al-Sultan Abdullah

This research paper presents the effect of working temperature on the ION, IOFF and ION/IOFF ratio of gate all around nanowire TFET. The (Silvaco) simulation tool has been used to investigate the temperature characteristics of a transistor. The working temperature range of this study is from -50 to 150 step-up 25 oC. The final results indicate that the negative effects of increasing working temperature of gate all around nanowire TFET due to decreasing of the ION/IOFF ratio. Hence, the results for ION/IOFF ratio vs. working temperature characteristics may lead to the use of TFET in electronic circuits with lowest possible working temperature to obtain higher ION/IOFF ratio.