Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review

Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: a review

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Bibliographic Details
Main Authors: Louis, Gerrer, Ding, J., Amoroso, S. M., Adamu-Lema, F., R., Hussin, Reid, D., Millar, C., Asenov, A.
Other Authors: louis.gerrer@glasgow.ac.uk
Format: Article
Language:English
Published: Elsevier 2014
Subjects:
MOSFETs
Statistical Variability (SV)
Online Access:http://dspace.unimap.edu.my:80/dspace/handle/123456789/35523
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Institution: Universiti Malaysia Perlis
Language: English
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Summary:Link to publisher's homepage at http://www.journals.elsevier.com

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