Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates
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Faculty of Science and Technology, Universiti Kebangsaan Malaysia
2016
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my.unimap-411752016-03-21T11:31:59Z Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates Ayu Wazira, Azhari Kamaruzzaman, Sopian Saleem Hussain, Zaidi ayuwazira@unimap.edu.my Heteroepitaxial growth Metal assisted chemical etching Nanostructured Si Silicon germanium Thermal evaporation Link to publisher's homepage at http://www.ukm.my/mjas/new_mjas/ In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: i.e. polished Si, Si micropyramids and Si nanopillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nanopillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000o C to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications. 2016-03-21T11:26:19Z 2016-03-21T11:26:19Z 2015 Article Malaysian Journal of Analytical Sciences, vol.19 (6), 2015, pages 1229-1242 1394-2506 http://www.ukm.my/mjas/v19_n6/pdf/AyuWazira_19_6_11.pdf http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41175 en Faculty of Science and Technology, Universiti Kebangsaan Malaysia |
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Heteroepitaxial growth Metal assisted chemical etching Nanostructured Si Silicon germanium Thermal evaporation |
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Heteroepitaxial growth Metal assisted chemical etching Nanostructured Si Silicon germanium Thermal evaporation Ayu Wazira, Azhari Kamaruzzaman, Sopian Saleem Hussain, Zaidi Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates |
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Link to publisher's homepage at http://www.ukm.my/mjas/new_mjas/ |
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ayuwazira@unimap.edu.my |
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ayuwazira@unimap.edu.my Ayu Wazira, Azhari Kamaruzzaman, Sopian Saleem Hussain, Zaidi |
format |
Article |
author |
Ayu Wazira, Azhari Kamaruzzaman, Sopian Saleem Hussain, Zaidi |
author_sort |
Ayu Wazira, Azhari |
title |
Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates |
title_short |
Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates |
title_full |
Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates |
title_fullStr |
Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates |
title_full_unstemmed |
Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates |
title_sort |
heteroepitaxial growth of vacuum-evaporated si-ge films on nanostructured silicon substrates |
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Faculty of Science and Technology, Universiti Kebangsaan Malaysia |
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2016 |
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http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41175 |
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1643799613070639104 |