Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates

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Main Authors: Ayu Wazira, Azhari, Kamaruzzaman, Sopian, Saleem Hussain, Zaidi
Other Authors: ayuwazira@unimap.edu.my
Format: Article
Language:English
Published: Faculty of Science and Technology, Universiti Kebangsaan Malaysia 2016
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Online Access:http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41175
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Institution: Universiti Malaysia Perlis
Language: English
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spelling my.unimap-411752016-03-21T11:31:59Z Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates Ayu Wazira, Azhari Kamaruzzaman, Sopian Saleem Hussain, Zaidi ayuwazira@unimap.edu.my Heteroepitaxial growth Metal assisted chemical etching Nanostructured Si Silicon germanium Thermal evaporation Link to publisher's homepage at http://www.ukm.my/mjas/new_mjas/ In this study, a low-cost vacuum-evaporated technique is used in the heteroepitaxial growth of Si-Ge films. Three different surface variations are employed: i.e. polished Si, Si micropyramids and Si nanopillars profiles. A simple metal-assisted chemical etching method is used to fabricate the Si nanopillars, with Ag acting as a catalyst. Following deposition, substrates are subjected to post-deposition thermal annealing at 1000o C to improve the crystallinity of the Ge layer. Optical and morphological studies of surface area are conducted using field emission scanning electron microscopy (FE-SEM), Energy Dispersive X-ray (EDX), Raman spectroscopy and infrared spectroscopy. From the infrared spectroscopy analysis, the energy bandgap for Si-Ge films is estimated to be around 0.94 eV. This high-quality Si-Ge film is most favourable for optics, optoelectronics and high-efficiency solar cell applications. 2016-03-21T11:26:19Z 2016-03-21T11:26:19Z 2015 Article Malaysian Journal of Analytical Sciences, vol.19 (6), 2015, pages 1229-1242 1394-2506 http://www.ukm.my/mjas/v19_n6/pdf/AyuWazira_19_6_11.pdf http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41175 en Faculty of Science and Technology, Universiti Kebangsaan Malaysia
institution Universiti Malaysia Perlis
building UniMAP Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Malaysia Perlis
content_source UniMAP Library Digital Repository
url_provider http://dspace.unimap.edu.my/
language English
topic Heteroepitaxial growth
Metal assisted chemical etching
Nanostructured Si
Silicon germanium
Thermal evaporation
spellingShingle Heteroepitaxial growth
Metal assisted chemical etching
Nanostructured Si
Silicon germanium
Thermal evaporation
Ayu Wazira, Azhari
Kamaruzzaman, Sopian
Saleem Hussain, Zaidi
Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates
description Link to publisher's homepage at http://www.ukm.my/mjas/new_mjas/
author2 ayuwazira@unimap.edu.my
author_facet ayuwazira@unimap.edu.my
Ayu Wazira, Azhari
Kamaruzzaman, Sopian
Saleem Hussain, Zaidi
format Article
author Ayu Wazira, Azhari
Kamaruzzaman, Sopian
Saleem Hussain, Zaidi
author_sort Ayu Wazira, Azhari
title Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates
title_short Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates
title_full Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates
title_fullStr Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates
title_full_unstemmed Heteroepitaxial growth of vacuum-evaporated Si-Ge films on nanostructured silicon substrates
title_sort heteroepitaxial growth of vacuum-evaporated si-ge films on nanostructured silicon substrates
publisher Faculty of Science and Technology, Universiti Kebangsaan Malaysia
publishDate 2016
url http://dspace.unimap.edu.my:80/xmlui/handle/123456789/41175
_version_ 1643799613070639104