A systematic dry etching process for profile control of quantum dots and nanoconstrictions
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Elsevier B.V.
2009
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my.unimap-68972009-08-14T03:17:13Z A systematic dry etching process for profile control of quantum dots and nanoconstrictions Madnarski, Sutikno Uda, Hashim Zul Azhar, Zahid Jamal Dry etch process Nanostructure dimension Quantum electronics Nanostructured materials Nanotechnology Quantum dot Silicon Nanostructures Link to publisher's homepage at www.elsevier.com In essence, quantum dot dimensions and others can be laterally and vertically defined by using either bottom up or top down methods respectively. In fabrication that uses top down method, etch process hold a chief role. Varieties of etch times and oxygen flow rates in ranges 75-88 s and 20-50 sccm, respectively, were devised to fabricate optimum dimension of nanostructure. As a result, as etch time increased, lateral etch rate of silicon quantum dot, source and drain and also the nanostructure etch depth increased. However, high roughness of etched silicon surface profile led to concave surfaces of source and drain. In this research, no significant relation between quantum dot diameters and oxygen flow rates was found. There was a reflection point, fixed data dot of 26 sccm, of the decreasing and increasing lines of relation between nanostructure depth of etched silicon and nanostructure gradient with the O2 flow rate. 2009-08-14T03:17:00Z 2009-08-14T03:17:00Z 2007-08 Article Microelectronics Journal, vol.38 (8-9), 2007, pages 823-827. 0959-8324 http://www.sciencedirect.com/science/journal/00262692 http://hdl.handle.net/123456789/6897 en Elsevier B.V. |
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Dry etch process Nanostructure dimension Quantum electronics Nanostructured materials Nanotechnology Quantum dot Silicon Nanostructures |
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Dry etch process Nanostructure dimension Quantum electronics Nanostructured materials Nanotechnology Quantum dot Silicon Nanostructures Madnarski, Sutikno Uda, Hashim Zul Azhar, Zahid Jamal A systematic dry etching process for profile control of quantum dots and nanoconstrictions |
| description |
Link to publisher's homepage at www.elsevier.com |
| format |
Article |
| author |
Madnarski, Sutikno Uda, Hashim Zul Azhar, Zahid Jamal |
| author_facet |
Madnarski, Sutikno Uda, Hashim Zul Azhar, Zahid Jamal |
| author_sort |
Madnarski, Sutikno |
| title |
A systematic dry etching process for profile control of quantum dots and nanoconstrictions |
| title_short |
A systematic dry etching process for profile control of quantum dots and nanoconstrictions |
| title_full |
A systematic dry etching process for profile control of quantum dots and nanoconstrictions |
| title_fullStr |
A systematic dry etching process for profile control of quantum dots and nanoconstrictions |
| title_full_unstemmed |
A systematic dry etching process for profile control of quantum dots and nanoconstrictions |
| title_sort |
systematic dry etching process for profile control of quantum dots and nanoconstrictions |
| publisher |
Elsevier B.V. |
| publishDate |
2009 |
| url |
http://dspace.unimap.edu.my/xmlui/handle/123456789/6897 |
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1643788619386716160 |