Single & multi beam laser grooving process parameter development and die strength characterization for 40nm node low-K/ULK wafer

This paper describes the development work on single and multi beam laser grooving technology for 40nm node low-k/ULK semiconductor device. A Nd:YAG ultraviolet (UV) laser diode operating at a wavelength of 355 nm was used in this study. The effects of single and multi beam laser micromachining param...

Full description

Saved in:
Bibliographic Details
Main Authors: Shi K.W., Yow K.Y., Lo C.
Other Authors: 35796107300
Format: Conference Paper
Published: Institute of Electrical and Electronics Engineers Inc. 2023
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: Universiti Tenaga Nasional