Optimisation of process parameters for lower leakage current in 22 nm n-type MOSFET device using Taguchi method

• Main Authors: Afifah Maheran A.H., Menon P.S., Ahmad I., Shaari S.
• Other Authors: 36570222300
• Format: Conference Paper
• Published: Penerbit UTM Press 2023
• Institution: Universiti Tenaga Nasional

In this article, Taguchi orthogonal array method was used to optimize the process parameters during the design of a 22 nm n-type Metal Oxide Semiconductor Field Effect Transistor (MOSFET) in order to decrease the leakage current (ILEAK) of the device. Titanium dioxide (TiO2) was used as the dielectr...