Effect of Halo structure variations on the threshold voltage of a 22 nm gate length NMOS transistor
This paper reports on the effects of the Halo structure variations on threshold voltage (Vth) in a 22 nm gate length high-k/metal gate planar NMOS transistor. Since the Vth is one of the important physical parameter for determining the functionality of complementary metal-oxide-semiconductor device,...
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| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
2023
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| Institution: | Universiti Tenaga Nasional |