Modeling of 14 nm gate length n-Type MOSFET

• Main Authors: Faizah Z.A.N., Ahmad I., Ker P.J., Roslan P.S.A., Maheran A.H.A.
• Other Authors: 56395444600
• Format: Conference Paper
• Published: Institute of Electrical and Electronics Engineers Inc. 2023
• Institution: Universiti Tenaga Nasional

Dielectric materials; Fabrication; Field effect transistors; Gate dielectrics; Gates (transistor); Hafnium oxides; High-k dielectric; Metals; MOS devices; Nanoelectronics; Oxide semiconductors; Reconfigurable hardware; Threshold voltage; Transistors; ATHENA; ATLAS; High-k/metal gates; Metal gate tra...