Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

Hafnium oxides; High-k dielectric; Manufacture; Silicides; Taguchi methods; CMOS transistors; HIGH-K metal gates; Modeling and optimization; Process parameters; Process parameters optimizations; Titanium silicide; Tungsten silicide; Wafer fabrications; Reconfigurable hardware

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Bibliographic Details
Main Authors: Noor Faizah Z.A., Ahmad I., Ker P.J., Siti Munirah Y., Mohd Firdaus R., Md Fazle E., Menon P.S.
Other Authors: 56395444600
Format: Conference Paper
Published: EDP Sciences 2023
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Institution: Universiti Tenaga Nasional
Description
Summary:Hafnium oxides; High-k dielectric; Manufacture; Silicides; Taguchi methods; CMOS transistors; HIGH-K metal gates; Modeling and optimization; Process parameters; Process parameters optimizations; Titanium silicide; Tungsten silicide; Wafer fabrications; Reconfigurable hardware

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