Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

• Main Authors: Noor Faizah Z.A., Ahmad I., Ker P.J., Siti Munirah Y., Mohd Firdaus R., Md Fazle E., Menon P.S.
• Other Authors: 56395444600
• Format: Conference Paper
• Published: EDP Sciences 2023
• Institution: Universiti Tenaga Nasional

Hafnium oxides; High-k dielectric; Manufacture; Silicides; Taguchi methods; CMOS transistors; HIGH-K metal gates; Modeling and optimization; Process parameters; Process parameters optimizations; Titanium silicide; Tungsten silicide; Wafer fabrications; Reconfigurable hardware