Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET
Ballistics; Display devices; Gate dielectrics; Graphene; Graphene devices; Graphene transistors; Hafnium oxides; High-k dielectric; Manufacture; Ohmic contacts; Reconfigurable hardware; Analytical expressions; Ballistic transports; Channel potential; Drain-induced barrier lowering; HIGH-K metal gate...
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Main Authors: | , , , |
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Format: | Conference Paper |
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EDP Sciences
2023
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Institution: | Universiti Tenaga Nasional |