Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET
Ballistics; Display devices; Gate dielectrics; Graphene; Graphene devices; Graphene transistors; Hafnium oxides; High-k dielectric; Manufacture; Ohmic contacts; Reconfigurable hardware; Analytical expressions; Ballistic transports; Channel potential; Drain-induced barrier lowering; HIGH-K metal gate...
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EDP Sciences
2023
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my.uniten.dspace-226362023-05-29T14:11:25Z Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET Noor Faizah Z.A. Ahmad I. Ker P.J. Menon P.S. 56395444600 12792216600 37461740800 57201289731 Ballistics; Display devices; Gate dielectrics; Graphene; Graphene devices; Graphene transistors; Hafnium oxides; High-k dielectric; Manufacture; Ohmic contacts; Reconfigurable hardware; Analytical expressions; Ballistic transports; Channel potential; Drain-induced barrier lowering; HIGH-K metal gates; Ideal ohmic contacts; Process characterization; Sub-threshold swing(ss); MOSFET devices This paper presents an inclusive study and analysis of graphene-based MOSFET device at 32nm gate length. The analysis was based on top-gated structure which utilized Hafnium Dioxide (HfO2) dielectrics and metal gate. The same conventional process flows of a transistor were applied except the deposition of bilayer graphene as a channel. The analytical expression of the channel potential includes all relevant physics of bilayer graphene and by assuming that this device displays an ideal ohmic contact and functioned at a ballistic transport. Based on the designed transistor, the on-state current (ION) for both GNMOS and GPMOS shows a promising performance where the value is 982.857uA/um and 99.501uA/um respectively. The devices also possess a very small leakage current (IOFF) of 0.289578nA/um for GNMOS and 0.130034nA/um for GPMOS as compared to the conventional SiO2/Poly-Si and high-k metal gate transistors. However, the devices suffer an inappropriate subthreshold swing (SS) and high value of drain induced barrier lowering (DIBL). � 2016 The Authors, published by EDP Sciences. Final 2023-05-29T06:11:25Z 2023-05-29T06:11:25Z 2016 Conference Paper 10.1051/matecconf/20167801016 2-s2.0-84992390128 https://www.scopus.com/inward/record.uri?eid=2-s2.0-84992390128&doi=10.1051%2fmatecconf%2f20167801016&partnerID=40&md5=df815cfef93cec7da76855409d46bb7c https://irepository.uniten.edu.my/handle/123456789/22636 78 1016 All Open Access, Gold, Green EDP Sciences Scopus |
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| description |
Ballistics; Display devices; Gate dielectrics; Graphene; Graphene devices; Graphene transistors; Hafnium oxides; High-k dielectric; Manufacture; Ohmic contacts; Reconfigurable hardware; Analytical expressions; Ballistic transports; Channel potential; Drain-induced barrier lowering; HIGH-K metal gates; Ideal ohmic contacts; Process characterization; Sub-threshold swing(ss); MOSFET devices |
| author2 |
56395444600 |
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56395444600 Noor Faizah Z.A. Ahmad I. Ker P.J. Menon P.S. |
| format |
Conference Paper |
| author |
Noor Faizah Z.A. Ahmad I. Ker P.J. Menon P.S. |
| spellingShingle |
Noor Faizah Z.A. Ahmad I. Ker P.J. Menon P.S. Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET |
| author_sort |
Noor Faizah Z.A. |
| title |
Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET |
| title_short |
Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET |
| title_full |
Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET |
| title_fullStr |
Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET |
| title_full_unstemmed |
Process Characterization of 32nm Semi Analytical Bilayer Graphene-based MOSFET |
| title_sort |
process characterization of 32nm semi analytical bilayer graphene-based mosfet |
| publisher |
EDP Sciences |
| publishDate |
2023 |
| _version_ |
1806428496568778752 |