High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control
High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive...
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| Format: | Article |
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Universiti Teknikal Malaysia Melaka
2023
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| Institution: | Universiti Tenaga Nasional |