High-k Dielectric Thickness and Halo Implant on Threshold Voltage Control

High-k dielectric oxides have been used to replace the widely used silicon dioxide (SiO2) gate dielectrics to overcome physical limits of transistor scaling. The thickness of high-k gate dielectric influences the threshold voltage (VTH) and off-state leakage current (IOFF). A device with high drive...

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Bibliographic Details
Main Authors: Mah S.K., Ahmad I., Ker P.J., Noor Faizah Z.A.
Other Authors: 57191706660
Format: Article
Published: Universiti Teknikal Malaysia Melaka 2023
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Institution: Universiti Tenaga Nasional
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