Comparison of L25 GRA and L25 taguchi statistical method for optimizing 16 NM DG-FinFET on output variation
The repercussions of a 16 nm double-gate FinFET (DG-FinFET) design against two different optimization methods are investigated and examined. The drive current (ION) and leakage current (IOFF) ramifications towards the adjustment of six process parameter that incorporates polysilicon doping dose, pol...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
Asian Research Publishing Network
2023
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| Institution: | Universiti Tenaga Nasional |