Enhanced performance of 19 single gate MOSFET with high permittivity dielectric material
In this research, the performance of the 19 nm single gate MOSFET is enhanced through the implementation of the high permittivity dielectric material. The MOSFET scaling trends necessities in device dimensions can be satisfied through the implementation of the high-K dielectric materials in place of...
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| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Published: |
Institute of Advanced Engineering and Science
2023
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| Institution: | Universiti Tenaga Nasional |