Microstructural evolution of oxygen incorporated CdTe thin films deposited by close-spaced sublimation
Annealing; Argon; Cadmium telluride; Carrier concentration; Energy gap; Grain size and shape; II-VI semiconductors; Morphology; Optical properties; Oxygen; Scanning electron microscopy; Sublimation; Surface morphology; Thin films; X ray diffraction; Argon ambient; Argon/O2 ambient; Cadmium telluride...
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2023
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my.uniten.dspace-273112023-05-29T17:42:32Z Microstructural evolution of oxygen incorporated CdTe thin films deposited by close-spaced sublimation Harif M.N. Rahman K.S. Doroody C. Rosly H.N. Isah M. Alghoul M.A. Misran H. Amin N. 22634024000 56348138800 56905467200 36873451800 57219626175 8626748100 6506899840 7102424614 Annealing; Argon; Cadmium telluride; Carrier concentration; Energy gap; Grain size and shape; II-VI semiconductors; Morphology; Optical properties; Oxygen; Scanning electron microscopy; Sublimation; Surface morphology; Thin films; X ray diffraction; Argon ambient; Argon/O2 ambient; Cadmium telluride thin films; Close spaced sublimation; Grainsize; In-vacuum; Micro-structural; Optical-; Property; Scanning electrons; Microstructure In this work, cadmium telluride (CdTe) thin film was deposited in vacuum (pure argon ambient) as well as different argon (Ar) and oxygen (O2) ambient conditions using close-spaced sublimation (CSS) method at the deposition pressure of 1 Torr. The deposited films were characterized via X-ray Diffraction (XRD), Scanning Electron Microscope (SEM), UV�Vis spectrophotometer and Hall Effect measurement for the analysis of structural properties, morphology, optical properties and electrical properties, respectively. XRD patterns exhibited almost similar preferential orientation plane at (1 1 1) irrespective of the O2 concentration. SEM surface morphology microstructure revealed that O2 presence had a substantial effect on grain size reaching up to 7.19 �m. Optical properties also demonstrated insignificant changes in the direct band gap values of around 1.48 eV. Carrier concentration showed an upward trend in the order of 1013 cm?3, whereby resistivity and mobility did not change substantially either in vacuum (pure Ar ambient) or in Ar/O2 ambient. � 2021 Elsevier B.V. Final 2023-05-29T09:42:32Z 2023-05-29T09:42:32Z 2022 Article 10.1016/j.matlet.2021.130552 2-s2.0-85112171257 https://www.scopus.com/inward/record.uri?eid=2-s2.0-85112171257&doi=10.1016%2fj.matlet.2021.130552&partnerID=40&md5=e40b3ab884602aa5f91c31027cdde098 https://irepository.uniten.edu.my/handle/123456789/27311 306 130552 Elsevier B.V. Scopus |
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Annealing; Argon; Cadmium telluride; Carrier concentration; Energy gap; Grain size and shape; II-VI semiconductors; Morphology; Optical properties; Oxygen; Scanning electron microscopy; Sublimation; Surface morphology; Thin films; X ray diffraction; Argon ambient; Argon/O2 ambient; Cadmium telluride thin films; Close spaced sublimation; Grainsize; In-vacuum; Micro-structural; Optical-; Property; Scanning electrons; Microstructure |
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22634024000 Harif M.N. Rahman K.S. Doroody C. Rosly H.N. Isah M. Alghoul M.A. Misran H. Amin N. |
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Harif M.N. Rahman K.S. Doroody C. Rosly H.N. Isah M. Alghoul M.A. Misran H. Amin N. |
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Harif M.N. Rahman K.S. Doroody C. Rosly H.N. Isah M. Alghoul M.A. Misran H. Amin N. Microstructural evolution of oxygen incorporated CdTe thin films deposited by close-spaced sublimation |
author_sort |
Harif M.N. |
title |
Microstructural evolution of oxygen incorporated CdTe thin films deposited by close-spaced sublimation |
title_short |
Microstructural evolution of oxygen incorporated CdTe thin films deposited by close-spaced sublimation |
title_full |
Microstructural evolution of oxygen incorporated CdTe thin films deposited by close-spaced sublimation |
title_fullStr |
Microstructural evolution of oxygen incorporated CdTe thin films deposited by close-spaced sublimation |
title_full_unstemmed |
Microstructural evolution of oxygen incorporated CdTe thin films deposited by close-spaced sublimation |
title_sort |
microstructural evolution of oxygen incorporated cdte thin films deposited by close-spaced sublimation |
publisher |
Elsevier B.V. |
publishDate |
2023 |
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1806426007126671360 |