Optimization of process parameter variations on threshold voltage in Ultrathin Pillar Vertical Double Gate MOSFET Device
In the fabrication of MOSFET devices, the process parameters play a very important role in deciding the MOSFET device's characteristics. The process parameter variations may contribute a significant impact on the dopant profiles that directly affect the device characteristics. These variations...
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| Main Authors: | , , , , |
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| Published: |
2017
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| Online Access: | http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5191 |
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| Institution: | Universiti Tenaga Nasional |