Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method

Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method

This paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium...

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Main Authors: Maheran, A.H.A., Menon, P.S., Shaari, S., Ahmad, I., Faizah, Z.A.N.
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Published: 2017
Online Access:http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5196
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spelling my.uniten.dspace-51962017-11-15T02:56:30Z Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method Maheran, A.H.A. Menon, P.S. Shaari, S. Ahmad, I. Faizah, Z.A.N. This paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium dioxide (TiO2) and Tungsten silicide (WSix) metal gate using an industrial-based numerical simulator. Using Taguchi's Signal-to-noise ratio (SNR) of nominal-the-best (NTB), the compensation implantation has been as identified as the dominant factor influencing the Vth value with 67.77% while the Halo implantation tilting angle has been identified as the adjustment factor. Upon optimization, the Vth value is-0.29538 V which is within the requirements of the International Technology Roadmap for Semiconductors (ITRS) 2012 which is-0.289 V ± 12.7 %. © 2015 IEEE. 2017-11-15T02:56:30Z 2017-11-15T02:56:30Z 2015 http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5196
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country Malaysia
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description This paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium dioxide (TiO2) and Tungsten silicide (WSix) metal gate using an industrial-based numerical simulator. Using Taguchi's Signal-to-noise ratio (SNR) of nominal-the-best (NTB), the compensation implantation has been as identified as the dominant factor influencing the Vth value with 67.77% while the Halo implantation tilting angle has been identified as the adjustment factor. Upon optimization, the Vth value is-0.29538 V which is within the requirements of the International Technology Roadmap for Semiconductors (ITRS) 2012 which is-0.289 V ± 12.7 %. © 2015 IEEE.
format
author Maheran, A.H.A.
Menon, P.S.
Shaari, S.
Ahmad, I.
Faizah, Z.A.N.
spellingShingle Maheran, A.H.A.
Menon, P.S.
Shaari, S.
Ahmad, I.
Faizah, Z.A.N.
Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method
author_facet Maheran, A.H.A.
Menon, P.S.
Shaari, S.
Ahmad, I.
Faizah, Z.A.N.
author_sort Maheran, A.H.A.
title Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method
title_short Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method
title_full Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method
title_fullStr Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method
title_full_unstemmed Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method
title_sort statistical optimization of process parameters for threshold voltage in 22 nm p-type mosfet using taguchi method
publishDate 2017
url http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5196
_version_ 1644493611297931264

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