Statistical optimization of process parameters for threshold voltage in 22 nm p-Type MOSFET using Taguchi method

• Main Authors: Maheran, A.H.A., Menon, P.S., Shaari, S., Ahmad, I., Faizah, Z.A.N.
• Published: 2017
• Online Access: http://dspace.uniten.edu.my:8080/jspui/handle/123456789/5196
• Institution: Universiti Tenaga Nasional

This paper aims to study the effect of process parameter variation on a nano-scaled planar p-type MOSFET (metal-oxide-semiconductor field-effect transistor) device for 22 nm technology using Taguchi's L9 orthogonal array. The device was constructed with high-k/metal gate consisting of Titanium...