Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Active-matrix GaN micro light-emitting diode display with unprecedented brightness

Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the signific...

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Bibliographic Details
Main Authors: Herrnsdorf, J., McKendry, J.J.D., Zhang, S., Xie, E., Ferreira, R., Massoubre, D., Zuhdi, A.M., Henderson, R.K., Underwood, I., Watson, S., Kelly, A.E., Gu, E., Dawson, M.D.
Format: Article
Language:en_US
Published: 2017
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Institution: Universiti Tenaga Nasional
Language: en_US
Description
Summary:Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the significance of a nonthermal increase of differential resistance upon multipixel operation. These findings underpin the realization of a blue microdisplay with a luminance of 106 cd/m2. © 1963-2012 IEEE.

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