Active-matrix GaN micro light-emitting diode display with unprecedented brightness
Displays based on microsized gallium nitride light-emitting diodes possess extraordinary brightness. It is demonstrated here both theoretically and experimentally that the layout of the n-contact in these devices is important for the best device performance. We highlight, in particular, the signific...
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Main Authors: | , , , , , , , , , , , , |
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Format: | Article |
Language: | en_US |
Published: |
2017
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Institution: | Universiti Tenaga Nasional |
Language: | en_US |