Process Parameters Optimization of 14nm MOSFET Using 2-D Analytical Modelling

• Main Authors: Noor Faizah, Z.A., Ahmad, I., Ker, P.J., Siti Munirah, Y., Mohd Firdaus, R., Md Fazle, E., Menon, P.S.
• Published: 2017
• Online Access: http://dspace.uniten.edu.my/jspui/handle/123456789/5972
• Institution: Universiti Tenaga Nasional

This paper presents the modeling and optimization of 14nm gate length CMOS transistor which is down-scaled from previous 32nm gate length. High-k metal gate material was used in this research utilizing Hafnium Dioxide (HfO2) as dielectric and Tungsten Silicide (WSi2) and Titanium Silicide (TiSi2) as...