Modelling of 14NM gate length La2O3-based n-type MOSFET
Gate length shrinkage is still the widely used method in transistor downsizing. In view of this, the downsizing of Equivalent Oxide Thickness (EOT) is also of high importance as it is the main focus in the process. Therefore, various studies on Metal Oxide Semiconductor Field Effect Transistors (MOS...
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| Main Authors: | , , , |
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| Format: | Conference Proceeding |
| Language: | en_US |
| Published: |
2017
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| Institution: | Universiti Tenaga Nasional |
| Language: | en_US |