Modelling of 14NM gate length La2O3-based n-type MOSFET

Gate length shrinkage is still the widely used method in transistor downsizing. In view of this, the downsizing of Equivalent Oxide Thickness (EOT) is also of high importance as it is the main focus in the process. Therefore, various studies on Metal Oxide Semiconductor Field Effect Transistors (MOS...

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Bibliographic Details
Main Authors: Mah, S.K., Ahmad, I., Ker, P.J., Noor Faizah, Z.A.
Format: Conference Proceeding
Language:en_US
Published: 2017
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Institution: Universiti Tenaga Nasional
Language: en_US