Influence of process parameters on threshold voltage and leakage current in 18nm NMOS device

• Main Authors: Atan, N.B., Ahmad, I.B., Majlis, B.B.Y., Fauzi, I.B.A.
• Format: Article
• Language: English
• Published: American Institute of Physics Inc. 2017
• Subjects: HfO2-High-K dielectric; Silvaco Software; Taguchi Method; TiSi2-Metal Gate Transistor
• Online Access: http://dspace.uniten.edu.my:80/jspui/handle/123456789/7
• Institution: Universiti Tenaga Nasional

The process parameters are very crucial factor in the development of transistors. There are many process parameters that influenced in the development of the transistors. In this research, we investigate the effects of the process parameters variation on response characteristics such as threshold vo...