Improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol-gel methods

A Pt/BST/NiFe/Cu multilayered capacitor was fabricated incorporating a polycrystalline Ba0.5Sr0.5TiO3 (BST) film deposited using the pulsed laser deposition technique. Qualitative X-ray diffraction analysis confirmed a perovskite structure for the deposited BST dielectric films which were fired at v...

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Main Authors: Balachandran, Ruthramurthy, Ong, Boon Hoong, Wong, Hin Yong, Tan, Kar Ban, Yow, Ho Kwang, Lee, Wai Keat
Format: Article
Language:English
Published: Carl Hanser Verlag 2014
Online Access:http://psasir.upm.edu.my/id/eprint/37974/1/Improved%20dielectric%20performance%20of%20barium%20strontium%20titanate%20multilayered%20capacitor%20by%20means%20of%20pulsed%20laser%20deposition%20and%20slow%20injection%20sol-gel%20methods.pdf
http://psasir.upm.edu.my/id/eprint/37974/
http://www.hanser-elibrary.com/doi/abs/10.3139/146.111045
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Institution: Universiti Putra Malaysia
Language: English
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spelling my.upm.eprints.379742015-12-29T09:10:40Z http://psasir.upm.edu.my/id/eprint/37974/ Improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol-gel methods Balachandran, Ruthramurthy Ong, Boon Hoong Wong, Hin Yong Tan, Kar Ban Yow, Ho Kwang Lee, Wai Keat A Pt/BST/NiFe/Cu multilayered capacitor was fabricated incorporating a polycrystalline Ba0.5Sr0.5TiO3 (BST) film deposited using the pulsed laser deposition technique. Qualitative X-ray diffraction analysis confirmed a perovskite structure for the deposited BST dielectric films which were fired at various temperatures. No intermediate phase was discernable with a post-annealing temperature of 750°C and highly crystallized thin film was obtained at a post-annealing temperature of 800°C. The fabricated capacitor with a BST film thickness of 665 nm exhibited respectable electrical performance with a dielectric constant, k of 657 and a dielectric loss, tan δ = 0.0137 at room temperature at an applied frequency of 1 MHz. The recorded charge storage density and leakage current density were 4.6 μC cm-2 and 33 nA cm-2, respectively, with ±5 V bias. Carl Hanser Verlag 2014-05 Article PeerReviewed application/pdf en http://psasir.upm.edu.my/id/eprint/37974/1/Improved%20dielectric%20performance%20of%20barium%20strontium%20titanate%20multilayered%20capacitor%20by%20means%20of%20pulsed%20laser%20deposition%20and%20slow%20injection%20sol-gel%20methods.pdf Balachandran, Ruthramurthy and Ong, Boon Hoong and Wong, Hin Yong and Tan, Kar Ban and Yow, Ho Kwang and Lee, Wai Keat (2014) Improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol-gel methods. International Journal of Materials Research, 105 (5). pp. 480-486. ISSN 1862-5282 http://www.hanser-elibrary.com/doi/abs/10.3139/146.111045 10.3139/146.111045
institution Universiti Putra Malaysia
building UPM Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Putra Malaysia
content_source UPM Institutional Repository
url_provider http://psasir.upm.edu.my/
language English
description A Pt/BST/NiFe/Cu multilayered capacitor was fabricated incorporating a polycrystalline Ba0.5Sr0.5TiO3 (BST) film deposited using the pulsed laser deposition technique. Qualitative X-ray diffraction analysis confirmed a perovskite structure for the deposited BST dielectric films which were fired at various temperatures. No intermediate phase was discernable with a post-annealing temperature of 750°C and highly crystallized thin film was obtained at a post-annealing temperature of 800°C. The fabricated capacitor with a BST film thickness of 665 nm exhibited respectable electrical performance with a dielectric constant, k of 657 and a dielectric loss, tan δ = 0.0137 at room temperature at an applied frequency of 1 MHz. The recorded charge storage density and leakage current density were 4.6 μC cm-2 and 33 nA cm-2, respectively, with ±5 V bias.
format Article
author Balachandran, Ruthramurthy
Ong, Boon Hoong
Wong, Hin Yong
Tan, Kar Ban
Yow, Ho Kwang
Lee, Wai Keat
spellingShingle Balachandran, Ruthramurthy
Ong, Boon Hoong
Wong, Hin Yong
Tan, Kar Ban
Yow, Ho Kwang
Lee, Wai Keat
Improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol-gel methods
author_facet Balachandran, Ruthramurthy
Ong, Boon Hoong
Wong, Hin Yong
Tan, Kar Ban
Yow, Ho Kwang
Lee, Wai Keat
author_sort Balachandran, Ruthramurthy
title Improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol-gel methods
title_short Improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol-gel methods
title_full Improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol-gel methods
title_fullStr Improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol-gel methods
title_full_unstemmed Improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol-gel methods
title_sort improved dielectric performance of barium strontium titanate multilayered capacitor by means of pulsed laser deposition and slow injection sol-gel methods
publisher Carl Hanser Verlag
publishDate 2014
url http://psasir.upm.edu.my/id/eprint/37974/1/Improved%20dielectric%20performance%20of%20barium%20strontium%20titanate%20multilayered%20capacitor%20by%20means%20of%20pulsed%20laser%20deposition%20and%20slow%20injection%20sol-gel%20methods.pdf
http://psasir.upm.edu.my/id/eprint/37974/
http://www.hanser-elibrary.com/doi/abs/10.3139/146.111045
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