Numerical study of side gate junction-less transistor in on state

• Main Authors: Dehzangi, Arash, Larki, Farhad, Yeop Majlis, Burhanuddin, Hamidon, Mohd Nizar, Navasery, Manizheh, Gharibshahi, Elham, Khalilzadeh, Nasrin, Vakilian, Mohammadmahdi, Saion, Elias
• Format: Conference or Workshop Item
• Language: English
• Published: IEEE 2013
• Online Access: http://psasir.upm.edu.my/id/eprint/68136/1/Numerical%20study%20of%20side%20gate%20junction-less%20transistor%20in%20on%20state.pdf; http://psasir.upm.edu.my/id/eprint/68136/
• Institution: Universiti Putra Malaysia

Side gate p-type Junctionless Silicon transistor is fabricated by AFM nanolithography on low-doped (105 cm-3) SOI wafer. In this work, the simulation characteristic of the device using TCAD Sentaurus in on state will be studied. The results show that the device is the pinch off transistor, works in...