Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization

Dalam kajian ini, struktur get HEMT dengan gatelength bersaiz 200 nm dan berprofil cendawan telah direkabentuk, difabrikasi dan dicirikan. In this research study, 200 nm gatelength HEMT gate structures with mushroom-shaped profile have been designed, fabricated and characterized.

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Bibliographic Details
Main Author:	Yusof, Ashaari
Format:	Thesis
Language:	English
Published:	2008
Subjects:	TK7800-8360 Electronics
Online Access:	http://eprints.usm.my/10407/1/FABRICATION_OF_SUBMICRON_HEMT_MUSHROOM_GATE.pdf http://eprints.usm.my/10407/
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Institution:	Universiti Sains Malaysia
Language:	English

id	my.usm.eprints.10407
record_format	eprints
spelling	my.usm.eprints.10407 http://eprints.usm.my/10407/ Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization Yusof, Ashaari TK7800-8360 Electronics Dalam kajian ini, struktur get HEMT dengan gatelength bersaiz 200 nm dan berprofil cendawan telah direkabentuk, difabrikasi dan dicirikan. In this research study, 200 nm gatelength HEMT gate structures with mushroom-shaped profile have been designed, fabricated and characterized. 2008-12 Thesis NonPeerReviewed application/pdf en http://eprints.usm.my/10407/1/FABRICATION_OF_SUBMICRON_HEMT_MUSHROOM_GATE.pdf Yusof, Ashaari (2008) Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization. Masters thesis, Universiti Sains Malaysia.
institution	Universiti Sains Malaysia
building	Hamzah Sendut Library
collection	Institutional Repository
continent	Asia
country	Malaysia
content_provider	Universiti Sains Malaysia
content_source	USM Institutional Repository
url_provider	http://eprints.usm.my/
language	English
topic	TK7800-8360 Electronics
spellingShingle	TK7800-8360 Electronics Yusof, Ashaari Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization
description	Dalam kajian ini, struktur get HEMT dengan gatelength bersaiz 200 nm dan berprofil cendawan telah direkabentuk, difabrikasi dan dicirikan. In this research study, 200 nm gatelength HEMT gate structures with mushroom-shaped profile have been designed, fabricated and characterized.
format	Thesis
author	Yusof, Ashaari
author_facet	Yusof, Ashaari
author_sort	Yusof, Ashaari
title	Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization
title_short	Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization
title_full	Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization
title_fullStr	Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization
title_full_unstemmed	Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization
title_sort	fabrication of submicron hemt mushroom gate structure using electron beam lithography and its characterization
publishDate	2008
url	http://eprints.usm.my/10407/1/FABRICATION_OF_SUBMICRON_HEMT_MUSHROOM_GATE.pdf http://eprints.usm.my/10407/
_version_	1657488757110079488

Fabrication Of Submicron HEMT Mushroom Gate Structure Using Electron Beam Lithography And Its Characterization

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