Aluminum Nitride Thin Films Grown Sol-gel Spin Coating Technique

In this study, aluminum nitride (AIN) thin films were grown on p-type silicon (1 00) substrate by sol-gel spin coating method. Two types of ethanol-based precursors were prepared , namely, precursors with and without the aid of diethanolamine (DEA). The objective of this work is to investigate the e...

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Main Authors: Isa, Nurul Atikah Mohd, Ng, Sha Shiong, Hassan, Zainuriah
Format: Conference or Workshop Item
Language:English
Published: 2017
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Online Access:http://eprints.usm.my/48804/1/NG17_OP07.pdf%20done.pdf
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Institution: Universiti Sains Malaysia
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spelling my.usm.eprints.48804 http://eprints.usm.my/48804/ Aluminum Nitride Thin Films Grown Sol-gel Spin Coating Technique Isa, Nurul Atikah Mohd Ng, Sha Shiong Hassan, Zainuriah QC1-999 Physics In this study, aluminum nitride (AIN) thin films were grown on p-type silicon (1 00) substrate by sol-gel spin coating method. Two types of ethanol-based precursors were prepared , namely, precursors with and without the aid of diethanolamine (DEA). The objective of this work is to investigate the effects of the DEA on the surface morphology, structural and optical properties of the deposited thin films. The coating films were undergone nitridation process under ammonia ambient at 1100 oc for 60 min The surface morphology and structural properties of the deposited AIN thin films were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD). The AFM results showed that the AIN thin films has uniform and smooth surface. XRD results revealed that both samples of the deposited AIN thin films have AIN (1 00) preferred orientation. In addition, the crystallinity of sample without the aid of DEA is higher compared with the sample with the aid of DEA. The optical properties of AIN thin films were investigated by Raman and UV-Vis spectroscopy. Raman results showed the present of E1(TO) peak at 670 em 1 for sample without DEA and no peak is observed for sample with the aid of DEA. It was observed from UV-vis reflectance spectra that both samples were having energy band gap at around 5 eV. Finally, all the results revealed that the present of DEA affects the properties of AIN thin films. 2017-11-16 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48804/1/NG17_OP07.pdf%20done.pdf Isa, Nurul Atikah Mohd and Ng, Sha Shiong and Hassan, Zainuriah (2017) Aluminum Nitride Thin Films Grown Sol-gel Spin Coating Technique. In: 6th International Conference on Solid State Science & Technology and Workshop on Advanced Materials Technology: Growth & Characterization.
institution Universiti Sains Malaysia
building Hamzah Sendut Library
collection Institutional Repository
continent Asia
country Malaysia
content_provider Universiti Sains Malaysia
content_source USM Institutional Repository
url_provider http://eprints.usm.my/
language English
topic QC1-999 Physics
spellingShingle QC1-999 Physics
Isa, Nurul Atikah Mohd
Ng, Sha Shiong
Hassan, Zainuriah
Aluminum Nitride Thin Films Grown Sol-gel Spin Coating Technique
description In this study, aluminum nitride (AIN) thin films were grown on p-type silicon (1 00) substrate by sol-gel spin coating method. Two types of ethanol-based precursors were prepared , namely, precursors with and without the aid of diethanolamine (DEA). The objective of this work is to investigate the effects of the DEA on the surface morphology, structural and optical properties of the deposited thin films. The coating films were undergone nitridation process under ammonia ambient at 1100 oc for 60 min The surface morphology and structural properties of the deposited AIN thin films were investigated by atomic force microscopy (AFM) and X-ray diffraction (XRD). The AFM results showed that the AIN thin films has uniform and smooth surface. XRD results revealed that both samples of the deposited AIN thin films have AIN (1 00) preferred orientation. In addition, the crystallinity of sample without the aid of DEA is higher compared with the sample with the aid of DEA. The optical properties of AIN thin films were investigated by Raman and UV-Vis spectroscopy. Raman results showed the present of E1(TO) peak at 670 em 1 for sample without DEA and no peak is observed for sample with the aid of DEA. It was observed from UV-vis reflectance spectra that both samples were having energy band gap at around 5 eV. Finally, all the results revealed that the present of DEA affects the properties of AIN thin films.
format Conference or Workshop Item
author Isa, Nurul Atikah Mohd
Ng, Sha Shiong
Hassan, Zainuriah
author_facet Isa, Nurul Atikah Mohd
Ng, Sha Shiong
Hassan, Zainuriah
author_sort Isa, Nurul Atikah Mohd
title Aluminum Nitride Thin Films Grown Sol-gel Spin Coating Technique
title_short Aluminum Nitride Thin Films Grown Sol-gel Spin Coating Technique
title_full Aluminum Nitride Thin Films Grown Sol-gel Spin Coating Technique
title_fullStr Aluminum Nitride Thin Films Grown Sol-gel Spin Coating Technique
title_full_unstemmed Aluminum Nitride Thin Films Grown Sol-gel Spin Coating Technique
title_sort aluminum nitride thin films grown sol-gel spin coating technique
publishDate 2017
url http://eprints.usm.my/48804/1/NG17_OP07.pdf%20done.pdf
http://eprints.usm.my/48804/
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