Various Doping Concentration Effect on Silicon-on-Insulator (SOI) Phase Modulator
This paper reports the effect of doping concentration to the electrical characteristic performance of the phase modulator in the carrier injection mode at wavelength 1.55μm. The phase modulator device has been integrated in the silicon-on-insulator (SOI) rib waveguide with the p-i-n diode struc...
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| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2010
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| Subjects: | |
| Online Access: | http://eprints.utem.edu.my/id/eprint/13083/1/icp_ura.pdf http://eprints.utem.edu.my/id/eprint/13083/ |
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| Institution: | Universiti Teknikal Malaysia Melaka |
| Language: | English |
| Summary: | This paper reports the effect of doping
concentration to the electrical characteristic performance of the
phase modulator in the carrier injection mode at wavelength
1.55μm. The phase modulator device has been integrated in the
silicon-on-insulator (SOI) rib waveguide with the p-i-n diode
structure. The electrical device performance is predicted using
the 2-D semiconductor package SILVACO (CAD) software
under DC operation. The least doping concentration of p+ and
n+ region produces the least change of refractive index of the
modulator. Meanwhile, results show that by increasing the
doping concentrations, the value of I decreases. This means that
the phase modulator performance is better with increased doping
concentrations. |
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