Optimization Of Process Parameter Variation In Double-Gate FinFET Model On Electrical Characteristics Using Statistical Method For Reduced Variability And Enhanced Performance

• Main Authors: Salehuddin, Fauziyah, Mohd Zain, Anis Suhaila, Haroon, Hazura, Abdul Razak, Hanim, Idris@Othman, Siti Khadijah, Ahmadi, Ibrahim
• Format: Technical Report
• Language: English
• Published: UTeM 2020
• Online Access: http://eprints.utem.edu.my/id/eprint/25464/1/Optimization%20Of%20Process%20Parameter%20Variation%20In%20Double-Gate%20Finfet%20Model%20On%20Electrical%20Characteristics%20Using%20Statistical%20Method%20For%20Reduced%20Variability%20And%20Enhanced%20Performance.pdf; http://eprints.utem.edu.my/id/eprint/25464/; https://plh.utem.edu.my/cgi-bin/koha/opac-detail.pl?biblionumber=118114
• Institution: Universiti Teknikal Malaysia Melaka

The conventional transistor device has been effective to provide for continual improvements in integrated circuit performance and cost per function with every technology node. However, transistor scaling has become increasingly difficult in the sub-45 nm regime. The main challenges for continued sc...