Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device

• المؤلف الرئيسي: Fauziyah , Salehuddin
• التنسيق: مقال
• اللغة: English
• منشور في: Academic Journals Inc.. 2011
• الموضوعات: TA Engineering (General). Civil engineering (General); QC Physics
• الوصول للمادة أونلاين: http://eprints.utem.edu.my/id/eprint/3798/3/%28J7%29_IJPS_6%2830%29_7026-7034.pdf; http://eprints.utem.edu.my/id/eprint/3798/; http://www.academicjournals.org/IJPS/

In this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (VTH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance cha...