Optimization of input process parameters variation on threshold voltage in 45 nm NMOS device

• Main Author: Fauziyah , Salehuddin
• Format: Article
• Language: English
• Published: Academic Journals Inc.. 2011
• Subjects: TA Engineering (General). Civil engineering (General); QC Physics
• Online Access: http://eprints.utem.edu.my/id/eprint/3798/3/%28J7%29_IJPS_6%2830%29_7026-7034.pdf; http://eprints.utem.edu.my/id/eprint/3798/; http://www.academicjournals.org/IJPS/
• Institution: Universiti Teknikal Malaysia Melaka

In this study, Taguchi method was used to optimize the influence of process parameter variations on threshold voltage (VTH) in 45 nm n-channel metal oxide semiconductor (NMOS) device. The orthogonal array, the signal-to-noise ratio, and analysis of variance were employed to study the performance cha...